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Institute of Physics



Revealing Stress Gradients in Semiconductor Heterostructures

A research Team from the MU Leoben (Schmidt Institute of Material Physics and Institute of Physics) and Infineon Technologies Austria AG published a paper on "Stress Gradients in Semiconductor Heterostructures" in Applied Physics Letters (APL)

A research team (headed by Jozef Keckes) of the Erich Schmidt Institute of Material Physics (ESI) and the Infineon Technologies Austria AG together with the Institute of Physics (R.T. Lechner) combined several complementary characterization techniques available at the ESI (HR-TEM, STEM, ILR and XRD) with a comprehensive analysis of the 2D XRD data. This combined effort enabled

“Resolving Alternating Stress Gradients and Dislocation Densities Across AlxGa1-xN Multilayer Structures on Si(111)” , as published recently in Applied Physics Letters:

M. Reisinger, M. Tomberger, J. Zechner, I. Daumiller, B. Sartory, W. Ecker, J. Keckes, and R.T. Lechner, Appl. Phys. Lett. 111, 162103 (2017)

Link: http://aip.scitation.org/doi/10.1063/1.4998694


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